4/11/2022

Zsolt Tokei

Zsolt Tokei's 141 research works with 1,429 citations and 11,440 reads, including: Enhancing interface doping in graphene-metal hybrid devices using H2 plasma clean. Atanasova, Tanya, Katrien Strubbe, Laureen Carbonell, Rudy Caluwaerts, Zsolt Tokei, and Philippe Vereecken. “Ultra-Low Copper Baths for Sub-35 Nm Copper Interconnects.”.

Author
Tanya Atanasova(UGent), Katrien Strubbe(UGent), Laureen Carbonell, Rudy Caluwaerts, Zsolt Tokei and Philippe Vereecken
Organization
Keywords
copper plating, filling

Citation

Zsolt Tokei

Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-2078506

MLA
Tokei
Atanasova, Tanya, et al. “Ultra-Low Copper Baths for Sub-35 Nm Copper Interconnects.” ECS Meeting Abstracts, vol. 41, ECS, The Electrochemical Society, 2011.
APA
Atanasova, T., Strubbe, K., Carbonell, L., Caluwaerts, R., Tokei, Z., & Vereecken, P. (2011). Ultra-low copper baths for sub-35 nm copper interconnects. In ECS Meeting Abstracts (Vol. 41). Penington, NY, USA: ECS, The Electrochemical Society.
Chicago author-date
Atanasova, Tanya, Katrien Strubbe, Laureen Carbonell, Rudy Caluwaerts, Zsolt Tokei, and Philippe Vereecken. 2011. “Ultra-Low Copper Baths for Sub-35 Nm Copper Interconnects.” In ECS Meeting Abstracts. Vol. 41. Penington, NY, USA: ECS, The Electrochemical Society.
Chicago author-date (all authors)
Atanasova, Tanya, Katrien Strubbe, Laureen Carbonell, Rudy Caluwaerts, Zsolt Tokei, and Philippe Vereecken. 2011. “Ultra-Low Copper Baths for Sub-35 Nm Copper Interconnects.” In ECS Meeting Abstracts. Vol. 41. Penington, NY, USA: ECS, The Electrochemical Society.
Vancouver
Atanasova T, Strubbe K, Carbonell L, Caluwaerts R, Tokei Z, Vereecken P. Ultra-low copper baths for sub-35 nm copper interconnects. In: ECS Meeting Abstracts. Penington, NY, USA: ECS, The Electrochemical Society; 2011.
IEEE

Zsolt Tokei Imec

T. Atanasova, K. Strubbe, L. Carbonell, R. Caluwaerts, Z. Tokei, and P. Vereecken, “Ultra-low copper baths for sub-35 nm copper interconnects,” in ECS Meeting Abstracts, Boston, MA, USA, 2011, vol. 41.
Zsolt TokeiZsolt Tokei

go to Japanese page
Information
About ADMETAPlus 2017
Important Dates
Travel
Topics
Call for Papers
Special issu of JJAP
Invited Speaker
Tutorial
Conference Program
Oral Presentation
Poster Presentation
Registration
Committee
Contact
Top Page

Advanced Metallization Conference 2017
27thAsian Session
Conference Invited Speakers

Conference Plenary Speaker:
1) A Glimpse of the Frontier of AI Research
Tamiya Onodera (IBM Research Tokyo)
2) Conductor trends for future interconnects
Zsolt Tokei (imec)
Conference Invited Speaker
1) Advanced Silicide/Germanide technology for sub-16/14 nm node devices
Jun Luo (Chinese Academy of Sciences)
2) Through-cobalt self-forming barrier copper interconnect and alternative conductor interconnects of cobalt and ruthenium for 7nm BEOL and beyond
Takeshi Nogami (IBM Research)
3) A prospect of metallization technology for future interconnects
Atsunobu Isobayashi (Toshiba)
4) Dielectric Atomic Layer Etching in high volume semiconductor manufacturing: Why now and how?
Gerardo Delgadino (Lam Research)
5) Selective atomic-level etching using two heating procedures, infrared irradiation, and ion bombardment, for next-generation semiconductor device manufacturing
Nobuya Miyoshi (Hitachi)
6) Tungsten CMP as Enabling Process for 14nm Transistor Scaling and Yield Enhancement
Hong Jin Kim (Globalfoundries)
7) Incorporate Graphene into Back End-of-Line for Better Cu Interconnects
Ling Li (Stanford University)
8) Robust nanoscale Cu interconnects coated by atomic-layer materials
Nguyen Thanh Cuong (NIMS)
9) The Critical Role and Application of Metallization Processes in Advanced Packaging
Rozalia Beica (Dow Chemical)
10) Challenges with join & interface integrity in next generation microelectronic packages
Vivek B. Dutta (EMD Performance Materials)
11) Chalcogenide superlattices for the next generation non-volatile memory
Junji Tominaga (AIST)